CMLT8099M Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS

CMLT8099M
SURFACE MOUNT
DUAL, MATCHED
NPN SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT8099M
consists of two individual, isolated 8099 NPN silicon
transistors with matched VBE(ON) characteristics.
This PICOmini™ device is manufactured by the
epitaxial planar process and epoxy molded in an
SOT-563 surface mount package.
MARKING CODE: 8CM
SOT-563 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Small signal general purpose amplifiers
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Transistor pair matched for VBE(ON)
SYMBOL
UNITS
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
80
80
6.0
500
350
-65 to +150
357
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=80V
0.1
IEBO
VBE=6.0V
0.1
BVCBO
IC=100µA
80
BVCEO
IC=10mA
80
BVEBO
IE=10µA
6.0
VCE(SAT)
IC=100mA, IB=5.0mA
0.4
VCE(SAT)
IC=100mA, IB=10mA
0.3
VBE(ON)
VCE=5.0V, IC=10mA
0.6
0.8
hFE
VCE=5.0V, IC=1.0mA
100
300
hFE
VCE=5.0V, IC=10mA
100
hFE
VCE=5.0V, IC=100mA
75
fT
VCE=5.0V, IC=10mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
UNITS
µA
µA
V
V
V
V
V
V
MHz
pF
pF
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
VCE=5.0V, IC=1.0µA
VCE=5.0V, IC=5.0µA
VCE=5.0V, IC=10µA
VCE=5.0V, IC=100µA
MIN
MAX
UNITS
10
mV
10
mV
10
mV
10
mV
R1 (20-January 2010)