CMLT8099 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON UNI-DIRECTIONAL 5.0 VOLT, 4-LINE TVS ARRAY

CMLT8099
SURFACE MOUNT SILICON
DUAL NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT8099
consists of two individual, isolated 8099 NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563 surface
mount package. This device has been designed for
small signal general purpose amplifier applications.
MARKING CODE: C89
SOT-563 CASE
APPLICATIONS:
• Small signal general purpose amplifiers
FEATURES:
• Device is Halogen Free by design
• Current IC=500mA
• Voltage VCEO=80V
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
80
80
6.0
500
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=80V
0.1
IEBO
VBE=6.0V
0.1
BVCBO
IC=100μA
80
BVCEO
IC=10mA
80
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=100mA, IB=5.0mA
0.4
VCE(SAT)
IC=100mA, IB=10mA
0.3
VBE(ON)
VCE=5.0V, IC=10mA
0.6
0.8
hFE
VCE=5.0V, IC=1.0mA
100
300
hFE
VCE=5.0V, IC=10mA
100
hFE
VCE=5.0V, IC=100mA
75
fT
VCE=5.0V, IC=10mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
Cib
VBE=0.5V, IC=0, f=1.0MHz
25
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
μA
μA
V
V
V
V
V
V
MHz
pF
pF
R2 (12-February 2014)