CMLT591E_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON PNP TRANSISTOR

CMLT591E
SURFACE MOUNT SILICON
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT591E is a
PNP Low VCE(SAT) 1.0 Amp transistor, epoxy molded
in a space saving SOT-563 surface mount package
and designed for applications requiring a high current
capability and low saturation voltages.
SOT-563 CASE
MARKING CODE: L59
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ_JA
80
60
5.0
1.0
2.0
200
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=4.0V
BVCBO
IC=100μA
80
BVCEO
IC=10mA
60
BVEBO
IE=100μA
5.0
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=1.0A, IB=100mA
VBE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
50
hFE
VCE=5.0V, IC=2.0A
15
fT
VCE=10V, IC=50mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
100
100
0.20
0.40
1.1
1.0
600
10
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
R5 (29-June 2015)