CMLT591E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – PNP Low VCE(Sat) 1.0 Amp transistor

CMLT591E
SURFACE MOUNT
PICOmini^TM
PNP SILICON TRANSISTOR
CCE
CCB
SOT-563 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT591E
type is a PNP Low VCE(Sat) 1.0 Amp transistor,
epoxy molded in a space saving PICOmini™
SOT-563 surface mount package and designed
for applications requiring a high current capability
and low saturation voltages.
MARKING CODE: L59
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
ICM
PD
TJ,Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=4.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
IE=100µA
5.0
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=100mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
50
hFE
VCE=5.0V, IC=2.0A
15
fT
VCE=10V, IC=50mA, f=100MHz
150
Cob
VCB=10V, IE=0, f=1.0MHz
80
60
5.0
1.0
200
2.0
250
-65 to +150
500
MAX
100
100
0.20
0.40
1.1
1.0
600
10
UNITS
V
V
V
A
mA
A
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
MHz
pF
R2 (7-August 2003)