CMLT5554_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

CMLT5554
SURFACE MOUNT
DUAL,COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR CMLT5554
consists of one 2N5551 NPN silicon transistor and one
individual isolated complementary 2N5401 PNP silicon
transistor, manufactured by the epitaxial planar process
and epoxy molded in an SOT-563 surface mount
package. This PICOmini™ device has been designed
for high voltage amplifier applications.
MARKING CODE: 5C4
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN (Q1)
PNP (Q2)
180
160
160
150
6.0
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
ICBO
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
VCB=120V
VCB=100V
VCB=120V, TA=100°C
VCB=100V, TA=150°C
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
- 50
-
-
- 50
-
-
180 -
160 -
6.0 -
- 0.15
- 0.2
- 1.0
- 1.0
80 -
80 250
30 -
100 300
- 6.0
50 200
- 8.0
-
-
- 50
-
-
- 50
160 -
150 -
5.0 -
- 0.2
- 0.5
- 1.0
- 1.0
50 -
60 240
50 -
100 300
- 6.0
40 200
- 8.0
UNITS
nA
nA
μA
μA
V
V
V
V
V
V
V
MHz
pF
dB
R1 (20-January 2010)