CMLT5554 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY HIGH VOLTAGE SILICON TRANSISTORS

CMLT5554
SURFACE MOUNT
PICOmini^TM
DUAL,COMPLEMENTARY
HIGH VOLTAGE
SILICON TRANSISTORS
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLT5554
consists of one 2N5551 NPN silicon transistor
and one individual isolated complementary
2N5401 PNP silicon transistor, manufactured
by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package.
This PICOmini™ device has been designed for
high voltage amplifier applications.
SOT-563 CASE
MARKING CODE: 5C4
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
NPN (Q1)
180
160
6.0
600
350
-65 to +150
357
PNP (Q2)
160
150
5.0
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICBO
ICBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
hfe
NF
TEST CONDITIONS
VCB=120V
VCB=100V
VCB=120V, TA=100°C
VCB=100V, TA=150°C
IC=100µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200µA, RS=10Ω,
f=10Hz to 15.7kHz
NPN (Q1)
MIN MAX
- 50
-
-
- 50
-
-
180 -
160 -
6.0 -
- 0.15
- 0.2
- 1.0
- 1.0
80 -
80 250
30 -
100 300
- 6.0
50 200
- 8.0
PNP (Q2)
MIN MAX
-
-
- 50
-
-
- 50
160 -
150 -
5.0 -
- 0.2
- 0.5
- 1.0
- 1.0
50 -
60 240
50 -
100 300
- 6.0
40 200
8.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
µA
µA
V
V
V
V
V
V
V
MHz
pF
dB
R0 (26-October 2004)