CMLT5551_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS

CMLT5551
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
HIGH VOLTAGE
SILICON SWITCHING TRANSISTORS
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5551
consists of two individual, isolated NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563 suface
mount package. This PICOmini™ devices has been
designed for high voltage amplifier applications.
MARKING CODE: 5C5
MAXIMUM RATINGS: (TA=25 ^OC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
180
160
6.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25^OC unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
ICBO
VCB=120V
50
ICBO
VCB=120V, TA=100°C
50
BVCBO
IC=100μA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10μA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
0.15
VCE(SAT) IC=50mA, IB=5.0mA
0.20
VBE(SAT) IC=10mA, IB=1.0mA
1.00
VBE(SAT) IC=50mA, IB=5.0mA
1.00
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
250
hFE
VCE=5.0V, IC=50mA
30
fT
VCE=10V, IC=10mA, f=100MHz
100
300
Cob
VCB=10V, IE=0, f=1.0MHz
6.0
hfe
VCE=10V, IC=1.0mA, f=1.0kHz
50
200
NF
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
8.0
UNITS
V
V
V
mA
mW
O_C
O_C/W
UNITS
nA
μA
V
V
V
V
V
V
V
MHz
pF
dB
R1 (20-January 2010)