CMLT5551HC_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON HIGH CURRENT NPN TRANSISTOR

CMLT5551HC
SURFACE MOUNT SILICON
HIGH CURRENT
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5551HC is
a high current NPN silicon transistor, manufactured by
the epitaxial planar process and epoxy molded in an
SOT-563 suface mount package. This device has been
designed for high voltage and high current amplifier
applications.
SOT-563 CASE
MAXIMUM RATINGS: (TA=25 ^OC)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MARKING CODE: C51
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
180
160
6.0
1.0
350
-65 to +150
357
UNITS
V
V
V
A
mW
O_C
O_C/W
ELECTRICAL CHARACTERISTICS: (TA=25^OC unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=120V
ICBO
VCB=120V, TA=100°C
IEBO
VEB=4.0V
BVCBO
IC=100μA
180
BVCEO
IC=1.0mA
160
BVEBO
IE=10μA
6.0
VCE(SAT) IC=10mA, IB=1.0mA
VCE(SAT) IC=50mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=1.0mA
VBE(SAT) IC=50mA, IB=5.0mA
hFE
VCE=5.0V, IC=1.0mA
80
hFE
VCE=5.0V, IC=10mA
80
hFE
VCE=5.0V, IC=50mA
30
hFE
VCE=10V, IC=1.0A
10
fT
VCE=10V, IC=10mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz
MAX
50
50
50
0.15
0.20
1.00
1.00
250
UNITS
nA
μA
nA
V
V
V
V
V
V
V
MHz
15
pF
R3 (29-June 2015)