CMLT5088EM_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR

CMLT5088EM
SURFACE MOUNT SILICON
DUAL, MATCHED
NPN TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5088EM
consists of two individual, isolated 5088E NPN silicon
transistors with matched VBE(ON) characteristics.
This device is designed for applications requiring high
gain and low noise.
MARKING CODE: 88M
SOT-563 CASE
• Device is Halogen Free by design
FEATURES:
• Transistor pair matched for VBE(ON)
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
50
50
5.0
100
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
ICBO
VCB=20V
IEBO
VEB=3.0V
BVCBO
IC=100μA
50
BVCEO
IC=1.0mA
50
BVEBO
IE=100μA
5.0
VCE(SAT)
IC=10mA, IB=1.0mA
VCE(SAT)
IC=100mA, IB=10mA
VBE(SAT)
IC=10mA, IB=1.0mA
hFE
VCE=5.0V, IC=0.1mA
300
hFE
VCE=5.0V, IC=1.0mA
300
hFE
VCE=5.0V, IC=10mA
300
hFE
VCE=5.0V, IC=100mA
50
fT
VCE=5.0V, IC=500μA, f=20MHz
100
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
350
NF
VCE=5.0V, IC=100μA, RS=10kΩ
f=10Hz to 15.7kHz
50
50
135
65
8.7
45
100
110
400
700
800
430
900
435
430
125
4.0
15
1400
3.0
UNITS
nA
nA
V
V
V
mV
mV
mV
MHz
pF
pF
dB
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
VCE=5.0V, IC=1.0μA
VCE=5.0V, IC=5.0μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
MIN
MAX
UNITS
10
mV
10
mV
10
mV
10
mV
R3 (29-June 2015)