CMLT5078E_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL TRANSISTORS

CMLT5078E NPN/PNP
CMLT5087E PNP/PNP
CMLT5088E NPN/NPN
ENHANCED SPECIFICATION
SURFACE MOUNT SILICON
DUAL TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5078E,
CMLT5087E, and CMLT5088E are surface mount
silicon transistors with enhanced specifications
designed for applications requiring high gain and low
noise.
SOT-563 CASE
MARKING CODES: CMLT5078E: L78
CMLT5087E: L87
CMLT5088E: L88 or 88
MAXIMUM RATINGS: (TA=25°C)
♦Collector-Base Voltage
♦Collector-Emitter Voltage
♦Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
50
50
5.0
100
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
TYP
SYMBOL TEST CONDITIONS
MIN
NPN PNP MAX
ICBO
VCB=20V
50
IEBO
VEB=3.0V
50
♦BVCBO
IC=100μA
50
135 150
♦BVCEO
IC=1.0mA
50
65 105
♦BVEBO
IE=100μA
5.0
8.7 7.5
♦VCE(SAT) IC=10mA, IB=1.0mA
45 50
100
♦♦VCE(SAT) IC=100mA, IB=10mA
110 225
400
VBE(SAT) IC=10mA, IB=1.0mA
700 700
800
♦hFE
VCE=5.0V, IC=0.1mA
300
430 390
900
hFE
VCE=5.0V, IC=1.0mA
300
435 380
♦hFE
VCE=5.0V, IC=10mA
300
430 350
♦♦hFE
VCE=5.0V, IC=100mA
50
125 75
♦fT
VCE=5.0V, IC=500μA, f=20MHz
100
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
Cib
VBE=0.5V, IC=0, f=1.0MHz
15
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
350
1400
NF
VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7kHz
3.0
UNITS
nA
nA
V
V
V
mV
mV
mV
MHz
pF
pF
dB
♦ Enhanced specification
♦♦Additional Enhanced specification
R6 (29-June 2015)