CMLT5078E Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – ENHANCED SPECIFICATION PICOmini SURFACE MOUNT SILICON DUAL TRANSISTORS

CMLT5078E NPN/PNP
CMLT5087E PNP/PNP
CMLT5088E NPN/NPN
Central^TM
Semiconductor Corp.
ENHANCED SPECIFICATION
PICOmini™ SURFACE MOUNT
SILICON DUAL TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMLT5078E, CMLT5087E, and CMLT5088E,
are Silicon transistors in a PICOmini™ surface
mount package with enhanced specifications
designed for applications requiring high gain and
low noise.
MARKING CODE & CONFIGURATION:
SOT-563 CASE
MAXIMUM RATINGS: (TA=25^oC)
♦^{Collector-Base Voltage}
♦^{Collector-Emitter Voltage}
♦^{Emitter-Base Voltage}
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
CMLT5078E: DUAL, COMPLEMENTARY: L78
CMLT5087E: DUAL, PNP: L87
CMLT5088E: DUAL, NPN: L88
SYMBOL
VCBO
50
VCEO
50
VEBO
5.0
IC
100
PD
350
UNITS
V
V
V
mA
mW
TJ,Tstg
Θ_JA
-65 to +150
357
o_C
o_C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25^oC unless otherwise noted)
TYP
SYMBOL TEST CONDITIONS
MIN
NPN PNP
MAX
UNITS
ICBO
VCB=20V
IEBO
VEB=3.0V
♦BVCBO
IC=100µA
50
135
150
♦BVCEO
♦BVEBO
IC=1.0mA
IE=100µA
50
65
105
5.0
8.7
7.5
♦VCE(SAT) IC=10mA, IB=1.0mA
45
50
♦♦ VCE(SAT) IC=100mA, IB=10mA
110
225
VBE(SAT) IC=10mA, IB=1.0mA
700
700
♦^hFE
VCE=5.0V, IC=0.1mA
300
430
390
hFE
VCE=5.0V, IC=1.0mA
300
435
380
♦^hFE
VCE=5.0V, IC=10mA
300
430
350
♦♦ ^hFE
VCE=5.0V, IC=100mA
50
125
75
♦ fT
VCE=5.0V, IC=500µA, f=20MHz
100
Cob
VCB=5.0V, IE=0, f=1.0MHz
Cib
VBE=0.5V, IC=0, f=1.0MHz
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
350
NF
VCE=5.0V, IC=100µA, RS=10kΩ f=10Hz to 15.7kHz
50
nA
50
nA
V
V
V
100
mV
400
mV
800
mV
900
4.0
15
1400
3.0
MHz
pF
pF
dB
♦ Enhanced specification.
♦♦ Additional Enhanced specification.
R2 (13-November 2002)