English
Language : 

CMLT4413_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – DUAL, COMPLEMENTARY TRANSISTOR
CMLT4413
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT4413
consists of one isolated 2N4401 NPN silicon transistor
and one complementary isolated 2N4403 PNP silicon
transistor, manufactured by the epitaxial planar process
and epoxy molded in an SOT-563 surface mount
package. This device is designed for small signal
general purpose amplifier and switching applications.
SOT-563 CASE
MARKING CODE: PC3
• Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
ΘJA
NPN (Q1) PNP (Q2)
60
40
40
40
6.0
5.0
600
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN (Q1)
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
IBEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
Cob
Cib
VCE=35V, VEB=0.4V
VCE=35V, VEB=0.4V
IC=100μA
IC=1.0mA
IE=100μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V, IC=150mA
VCE=2.0V, IC=150mA
VCE=2.0V, IC=500mA
VCE=10V, IC=20mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
-
0.1
-
0.1
60
-
40
-
6.0
-
- 0.40
- 0.75
0.75 0.95
-
1.2
20
-
40
-
80
-
100 300
-
-
40
-
250
-
-
6.5
-
30
PNP (Q2)
MIN MAX
-
0.1
-
0.1
40
-
40
-
5.0
-
- 0.40
- 0.75
0.75 0.95
-
1.3
30
-
60
-
100
-
-
-
100 300
20
-
200
-
-
8.5
-
30
UNITS
μA
μA
V
V
V
V
V
V
V
MHz
pF
pF
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm2
R3 (29-June 2015)