CMLT3410_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL LOW VCE(SAT) SILICON TRANSISTORS

CMLT3410 NPN
CMLT7410 PNP
CMLT3474 NPN/PNP
SURFACE MOUNT
DUAL LOW VCE(SAT)
SILICON TRANSISTORS
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR dual devices
are low VCE(SAT) silicon transistors in a PICOmini™
surface mount package designed for small signal
general purpose amplifier and switching applications
requiring low collector emitter saturation voltage.
MARKING CODES: CMLT3410: C34
CMLT7410: C74
CMLT3474: C37
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
PD
TJ, Tstg
Θ_JA
40
25
6.0
1.0
1.5
350
-65 to +150
357
UNITS
V
V
V
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
TYP
SYMBOL TEST CONDITIONS
MIN
NPN PNP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT) IC=50mA, IB=5.0mA
VCE(SAT) IC=100mA, IB=10mA
VCE(SAT) IC=200mA, IB=20mA
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=800mA, IB=80mA
VCE(SAT) IC=1.0A, IB=100mA
VBE(SAT) IC=800mA, IB=80mA
VBE(ON) VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT3410)
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT7410)
20
25
35
40
75
80
130 150
200 220
250 275
MAX
100
100
50
75
150
250
400
450
1.1
0.9
300
10
15
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
pF
R2 (20-January 2010)