CMLT3410 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL LOW VCE(SAT) SILICON TRANSISTORS

CMLT3410 NPN
CMLT7410 PNP
CMLT3474 NPN/PNP
Central^TM
Semiconductor Corp.
SURFACE MOUNT PICOmini™
DUAL LOW VCE(SAT)
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT3410
(Dual NPN), CMLT7410 (Dual PNP), and CMLT3474
(Complementary NPN & PNP), are low VCE(SAT)
silicon transistors in a PICOmini™ surface mount
package designed for small signal general purpose
amplifier and switching applications requiring low
collector emitter saturation voltage.
SOT-563 CASE
MAXIMUM RATINGS: (TA=25^oC)
MARKING CODES:
CMLT3410
NPN:
C34
CMLT7410
PNP:
C74
CMLT3474
NPN/PNP: C37
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
ICM
PD
TJ,Tstg
Θ_JA
40
25
6.0
1.0
1.5
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25^oC unless otherwise noted)
TYP
SYMBOL TEST CONDITIONS
MIN
NPN PNP
MAX
ICBO
VCB=40V
100
IEBO
VEB=6.0V
100
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT) IC=50mA, IB=5.0mA
20
25
50
VCE(SAT) IC=100mA, IB=10mA
35
40
75
VCE(SAT) IC=200mA, IB=20mA
75
80
150
VCE(SAT) IC=500mA, IB=50mA
130
150
250
VCE(SAT) IC=800mA, IB=80mA
200
220
400
VCE(SAT) IC=1.0A, IB=100mA
250
275
450
VBE(SAT) IC=800mA, IB=80mA
1.1
VBE(ON) VCE=1.0V, IC=10mA
0.9
hFE
VCE=1.0V, IC=10mA
100
hFE
VCE=1.0V, IC=100mA
100
300
hFE
VCE=1.0V, IC=500mA
100
hFE
VCE=1.0V, IC=1.0A
50
fT
VCE=10V, IC=50mA, f=100MHz
100
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT3410)
10
Cob
VCB=10V, IE=0, f=1.0MHz (CMLT7410)
15
UNITS
V
V
V
A
A
mW
o_C
o_C/W
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
MHz
pF
pF
R0 (28-March 2005)