CMLT2907A_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL PNP TRANSISTOR

CMLT2907A
SURFACE MOUNT SILICON
DUAL PNP TRANSISTOR
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2907A
consists of two individual, isolated 2907A PNP
silicon transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563 surface
mount package. This device has been designed
for small signal general purpose and switching
applications.
MARKING CODE: L07
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
60
60
5.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=50V
10
ICBO
VCB=50V, TA=125°C
10
ICEV
VCE=30V, VBE=0.5V
50
BVCBO
IC=10μA
60
BVCEO
IC=10mA
60
BVEBO
IE=10μA
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.6
VBE(SAT)
IC=150mA, IB=15mA
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.6
hFE
VCE=10V, IC=0.1mA
75
hFE
VCE=10V, IC=1.0mA
100
hFE
VCE=10V, IC=10mA
100
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
50
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
V
V
V
V
V
V
V
R4 (29-June 2015)