CMLT2222AG Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS

CMLT2222AG
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2222AG
consists of two (2) isolated 2222A NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-563 surface
mount package. These PICOmini™ devices have
been designed for small signal general purpose and
switching applications.
SOT-563 CASE
• Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MARKING CODE: 2CG
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ_JA
75
40
6.0
600
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mW
mW
mW
O_C
O_C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=60V, TA=125 °C
10
ICEV
VCE=60V, VEB=3.0V
10
IEBO
VEB=3.0V
10
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
VCE(SAT)
IC=500mA, IB=50mA
1.0
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
VBE(SAT)
IC=500mA, IB=50mA
2.0
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
40
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
R3 (20-January 2010)