CMLT2222A Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS

CMLT2222A
SURFACE MOUNT
PICOmini^TM
DUAL NPN SMALL SIGNAL
SILICON SWITCHING TRANSISTORS
SOT-563 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2222A
consists of two individual, isolated 2222A NPN
silicon transistors, manufactured by the epitaxial
planar process and epoxy molded in an SOT-563
surface mount package. This PICOmini™
devices has been designed for small signal
general purpose and switching applications.
MARKING CODE: L22
MAXIMUM RATINGS: (TA=25 ^OC)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
75
40
6.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25^OC unless otherwise noted)
SYMBOL
ICBO
ICBO
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=60V, TA=125 ^OC
VCE=60V, VEB=3.0V
VEB=3.0V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=1.0V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
MIN
MAX
10
10
10
10
75
40
6.0
0.3
1.0
0.6
1.2
2.0
35
50
75
50
100
300
40
UNITS
V
V
V
mA
mW
O_C
O_C/W
UNITS
nA
µA
nA
nA
V
V
V
V
V
V
V
R1 (13-November 2002)