CMLT2207G Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, COMPLEMENTARY SILICON TRANSISTORS

CMLT2207G
SURFACE MOUNT
DUAL, COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
• Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT2207G
consists of one isolated 2N2222A NPN transistor and
one complementary isolated 2N2907A PNP transistor,
manufactured by the epitaxial planar process and
epoxy molded in an SOT-563 surface mount package.
This PICOmini™ device has been designed for
small signal general purpose amplifier and switching
applications.
MARKING CODE: L7G
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN (Q1)
PNP (Q2)
75
60
40
60
6.0
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
ICBO
ICBO
ICBO
ICEV
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VCE=60V, VEB(OFF)=3.0V
VCE=30V, VEB(OFF)=500mV
VEB=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
- 10
-
-
- 10
-
-
- 10
-
-
- 10
75 -
40 -
6.0 -
- 0.3
- 1.0
0.6 1.2
- 2.0
35 -
50 -
75 -
100 300
50 -
40 -
-
-
- 10
-
-
- 10
-
-
- 50
-
-
60 -
60 -
5.0 -
- 0.4
- 1.6
- 1.3
- 2.6
75 -
100 -
100 -
100 300
-
-
50 -
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
R3 (20-January 2010)