CMLT2207 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL,COMPLEMENTARY SILICON TRANSISTORS

CMLT2207
SURFACE MOUNT
PICOmini^TM
DUAL,COMPLEMENTARY
SILICON TRANSISTORS
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
VCBO
VCEO
VEBO
IC
PD
Junction Temperature
Thermal Resistance
TJ,Tstg
Θ_JA
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLT2207
consists of one 2N2222A NPN silicon transistor
and one individual isolated complementary
2N2907A PNP silicon transistor, manufactured
by the epitaxial planar process and epoxy
molded in an SOT-563 surface mount package.
This PICOmini™ device has been designed for
small signal general purpose amplifier and
switching applications.
MARKING CODE: L70
NPN (Q1)
75
40
6.0
600
350
PNP (Q2)
60
60
5.0
UNITS
V
V
V
mA
mW
-65 to +150
357
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB(OFF)=3.0V
VCE=30V, VEB(OFF)=500mV
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
NPN (Q1)
MIN MAX
- 10
-
-
- 10
-
-
- 10
- 10
-
-
75 -
40 -
6.0 -
- 0.3
- 1.0
0.6 1.2
- 2.0
35 -
50 -
75 -
100 300
50 -
40 -
PNP (Q2)
MIN MAX
-
-
- 10
-
-
- 10
-
-
-
-
- 50
60 -
60 -
5.0 -
- 0.4
- 1.6
- 1.3
- 2.6
75 -
100 -
100 -
100 300
-
-
50 -
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
R1 (13-November 2002)