CMLM8205_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SCHOTTKY DIODE

CMLM8205
Multi Discrete Module^™
SURFACE MOUNT SILICON
P-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM8205 is a
Multi Discrete Module™ consisting of a single
P-Channel enhancement-mode MOSFET and a
low VF Schottky diode packaged in a space saving
SOT-563 surface mount case. This device is designed
for small signal general purpose applications where
size and operational efficiency are prime requirements.
SOT-563 CASE
MARKING CODE: C85
APPLICATIONS:
• DC-DC Converters
• Battery Powered Portable Equipment
FEATURES:
• Low rDS(on) Transistor (3.0Ω MAX @ VGS=5.0V)
• Low VF Shottky Diode (0.47V MAX @ 0.5A)
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
PD
PD
TJ, Tstg
Θ_JA
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
SYMBOL
Drain-Source Voltage
VDS
50
Drain-Gate Voltage
VDG
50
Gate-Source Voltage
VGS
20
Continuous Drain Current
ID
280
Continuous Source Current (Body Diode)
IS
280
Maximum Pulsed Drain Current
IDM
1.5
Maximum Pulsed Source Current
ISM
1.5
UNITS
V
V
V
mA
mA
A
A
MAXIMUM RATINGS - D1: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
40
Continuous Forward Current
IF
500
Peak Repetitive Forward Current, tp≤1.0ms
IFRM
3.5
Peak Forward Surge Current, tp = 8.0ms
IFSM
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR VGS=20V, VDS=0
100
IDSS
VDS=50V, VGS=0
1.0
IDSS
VDS=50V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
50
BVDSS
VGS=0, ID=10μA
50
VGS(th)
VDS=VGS, ID=250μA
1.0
2.5
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
UNITS
nA
μA
μA
mA
V
V
R3 (1-July 2015)