CMLM7405_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT LOW VCE(SAT) SILICON PNP TRANSISTOR

CMLM7405
MULTI DISCRETE MODULE^™
SURFACE MOUNT
HIGH CURRENT
LOW VCE(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM7405 is a
single PNP Transistor and Schottky Diode packaged
in a space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM3405
• Combination High Current Low VCE(SAT)
Transistor and Low VF Schottky Diode.
MARKING CODE: C57
MAXIMUM RATINGS - Case: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
TJ, Tstg
Θ_JA
350
-65 to +150
357
MAXIMUM RATINGS - Q1: (TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
6.0
Continuous Collector Current
IC
1.0
Peak Collector Current
ICM
1.5
MAXIMUM RATINGS - D1: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
40
Continuous Forward Current
IF
500
Peak Repetitive Forward Current, tp ≤1.0ms
IFRM
3.5
Peak Forward Surge Current, tp = 8.0ms
IFSM
10
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT) IC=50mA, IB=5.0mA
25
VCE(SAT) IC=100mA, IB=10mA
40
VCE(SAT) IC=200mA, IB=20mA
80
VCE(SAT) IC=500mA, IB=50mA
150
VCE(SAT) IC=800mA, IB=80mA
220
VCE(SAT) IC=1.0A, IB=100mA
275
VBE(SAT) IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
MAX
100
100
50
75
150
250
400
450
1.1
0.9
UNITS
mW
°C
°C/W
UNITS
V
V
V
A
A
UNITS
V
mA
A
A
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
R1 (18-January 2010)