CMLM7405 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MULTI DISCRETE MODULE™ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM7405
MULTI DISCRETE MODULE ^™
SURFACE MOUNT
HIGH CURRENT
LOW VCE _(SAT) SILICON PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
TM
SOT-563 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLM7405 is a single
PNP Transistor and Schottky Diode packaged in a
space saving SOT-563 case is designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM3405
• Combination High Current Low VCE _(SAT)
Transistor and Low VF Schottky Diode.
MARKING CODES: C57
MAXIMUM RATINGS (SOT-563 Package):
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
(TA=25°C)
MAXIMUM RATINGS Q1:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
(TA=25°C)
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
SYMBOL
PD
TJ, Tstg
Θ_JA
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
40
25
6.0
1.0
1.5
40
500
3.5
10
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
TEST CONDITIONS
VCB=40V
VEB=6.0V
IC=100µA
IC=10mA
IE=100µA
IC=50mA, IB=5.0mA
IC=100mA, IB=10mA
IC=200mA, IB=20mA
IC=500mA, IB=50mA
IC=800mA, IB=80mA
IC=1.0A, IB=100mA
IC=800mA, IB=80mA
VCE=1.0V, IC=10mA
MIN
TYP
MAX
100
100
40
25
6.0
25
50
40
75
80
150
150
250
220
400
275
450
1.1
0.9
UNITS
mW
°C
°C/W
UNITS
V
V
V
A
A
UNITS
V
mA
A
A
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
R0 (23-March 2005)