CMLM3405_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT HIGH CURRENT LOW VCE(SAT) SILICON NPN TRANSISTOR

CMLM3405
MULTI DISCRETE MODULE^™
SURFACE MOUNT
HIGH CURRENT
LOW VCE(SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM3405 is a
single NPN Transistor and Schottky Diode packaged in
a space saving SOT-563 case and designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM7405
• Combination High Current Low VCE(SAT)
Transistor and Low VF Schottky Diode.
MARKING CODE: C53
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
PD
TJ, Tstg
Θ_JA
350
-65 to +150
357
UNITS
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
SYMBOL
Collector-Base Voltage
VCBO
40
Collector-Emitter Voltage
VCEO
25
Emitter-Base Voltage
VEBO
6.0
Continuous Collector Current
IC
1.0
Peak Collector Current
ICM
1.5
UNITS
V
V
V
A
A
MAXIMUM RATINGS - D1: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
40
Continuous Forward Current
IF
500
Peak Repetitive Forward Current, tp ≤1.0ms
IFRM
3.5
Peak Forward Surge Current, tp = 8.0ms
IFSM
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100μA
40
BVCEO
IC=10mA
25
BVEBO
IE=100μA
6.0
VCE(SAT) IC=50mA, IB=5.0mA
20
VCE(SAT) IC=100mA, IB=10mA
35
VCE(SAT) IC=200mA, IB=20mA
75
VCE(SAT) IC=500mA, IB=50mA
130
VCE(SAT) IC=800mA, IB=80mA
200
VCE(SAT) IC=1.0A, IB=100mA
250
VBE(SAT) IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
MAX
100
100
50
75
150
250
400
450
1.1
0.9
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
R1 (18-January 2010)