CMLM2205_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM2205
MULTI DISCRETE MODULE^™
SURFACE MOUNT
SILICON SWITCHING NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM2205 is a
Multi Discrete Module™ consisting of a single NPN
Transistor and Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
• Combination: Small Signal Switching NPN Transistor
and Low VF Schottky Diode.
• Complementary Device: CMLM0705
MARKING CODE: C22
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
SYMBOL
PD
TJ, Tstg
Θ_JA
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
100
45
6.0
600
40
500
3.5
10
UNITS
mW
°C
°C/W
UNITS
V
V
V
mA
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
ICBO
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
VCB=60V
VCB=60V, TA=125 °C
VCE=60V, VEB=3.0V
VEB=3.0V
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=1.0V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
100
145
45
53
6.0
0.09
0.12
0.6
100
210
100
205
100
205
75
150
100
60
130
MAX
10
10
10
10
0.15
0.50
1.2
2.0
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
300
R2 (18-January 2010)