CMLM2205 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MULTI DISCRETE MODULE™ SURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM2205
M U LT I D I S C R E T E M O D U L E ^™
SURFACE MOUNT
SILICON SWITCHING NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
TM
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLM0205 is a
Multi Discrete Module™ consisting of a single NPN
Transistor and Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
SOT-563 CASE
• Combination: Small Signal Switching NPN Transistor
and Low VF Schottky Diode.
• Complementary Device: CMLM0705
MARKING CODE: C22
MAXIMUM RATINGS (SOT-563 Package):
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
(TA=25°C)
MAXIMUM RATINGS Q1:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(TA=25°C)
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
SYMBOL
PD
TJ, Tstg
Θ_JA
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
100
45
6.0
600
40
500
3.5
10
UNITS
mW
°C
°C/W
UNITS
V
V
V
mA
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS Q1:
SYMBOL TEST CONDITIONS
ICBO
ICBO
ICEV
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
VCB=60V
VCB=60V, TA=125 ^OC
VCE=60V, VEB=3.0V
VEB=3.0V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=1.0V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
(TA=25°C unless otherwise noted)
MIN
100
45
6.0
0.6
100
100
100
75
100
60
TYP
MAX UNITS
10
nA
10
µA
10
nA
10
nA
145
V
53
V
V
0.09
0.15
V
0.12
0.50
V
1.2
V
2.0
V
210
205
205
150
300
130
R0 (06-October 2004)