CMLM0705_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM0705
MULTI DISCRETE MODULE^™
SURFACE MOUNT
SILICON SWITCHING PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
MAXIMUM RATINGS - Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
MAXIMUM RATINGS - D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp≤1.0ms
Peak Forward Surge Current, tp = 8.0ms
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0705 is a
Multi Discrete Module™ consisting of a single PNP
Transistor and a Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
• Combination: Small Signal Switching PNP Transistor
and Low VF Schottky Diode.
• Complementary Device: CMLM2205
MARKING CODE: C75
SYMBOL
PD
TJ, Tstg
Θ_JA
350
-65 to +150
357
UNITS
mW
°C
°C/W
SYMBOL
VCBO
90
VCEO
60
VEBO
6.0
IC
600
UNITS
V
V
V
mA
SYMBOL
VRRM
40
IF
500
IFRM
3.5
IFSM
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
ICBO
ICBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
VCB=50V
VCB=50V, TA=125°C
VCE=30V, VBE=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
90
115
60
5.0
0.113
0.280
100
205
100
100
100
75
110
MAX
10
10
50
0.2
0.7
1.3
2.6
300
UNITS
nA
µA
nA
V
V
V
V
V
V
V
R1 (18-January 2010)