CMLM0705 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MULTI DISCRETE MODULE™ SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE

CMLM0705
M U LT I D I S C R E T E M O D U L E ^™
SURFACE MOUNT
SILICON SWITCHING PNP TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
TM
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLM0705 is a
Multi Discrete Module™ consisting of a single PNP
Transistor and a Schottky Diode packaged in a space
saving PICOmini™ SOT-563 case. This device is
designed for small signal general purpose applications
where size and operational efficiency are prime
requirements.
SOT-563 CASE
• Combination: Small Signal Switching PNP Transistor
and Low VF Schottky Diode.
• Complementary Device: CMLM2205
MARKING CODE: C75
MAXIMUM RATINGS (SOT-563 Package):
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
(TA=25°C)
MAXIMUM RATINGS Q1:
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(TA=25°C)
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
SYMBOL
PD
TJ, Tstg
Θ_JA
SYMBOL
VCBO
VCEO
VEBO
IC
SYMBOL
VRRM
IF
IFRM
IFSM
350
-65 to +150
357
90
60
6.0
600
40
500
3.5
10
UNITS
mW
°C
°C/W
UNITS
V
V
V
mA
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
ICBO
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
TEST CONDITIONS
VCB=50V
VCB=50V, TA=125°C
VCE=30V, VBE=0.5V
IC=10µA
IC=10mA
IE=10µA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
MIN TYP MAX UNITS
10
nA
10
µA
50
nA
90 115
V
60
V
5.0
V
0.113 0.2
V
0.280 0.7
V
1.3
V
2.6
V
100 205
100
100
100
300
75 110
R0 (06-October 2004)