CMLM0575_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SCHOTTKY DIODE

CMLM0575
Multi Discrete Module^™
SURFACE MOUNT SILICON
N-CHANNEL MOSFET AND
LOW VF SCHOTTKY DIODE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0575 is a
Multi Discrete Module™ consisting of a single N-Channel
enhancement-mode MOSFET and a low VF Schottky
diode packaged in a space saving SOT-563 surface
mount case. This device is designed for small signal
general purpose applications where size and operational
efficiency are prime requirements.
SOT-563 CASE
APPLICATIONS:
• DC-DC Converters
• Boost Converters
• Motor Drive Controls
• Battery Powered Portable Equipment
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
MARKING CODE: 75C
FEATURES:
• High Current MOSFET (ID=650mA)
• ESD protection up to 2kV
• Low rDS(ON) MOSFET (275mΩ MAX @ VGS=2.5V)
• Low VF Schottky Diode (0.47V MAX @ 0.5A)
SYMBOL
PD
PD
PD
TJ, Tstg
Θ_JA
350
300
150
-65 to +150
357
UNITS
mW
mW
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
SYMBOL
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
8.0
Continuous Drain Current
ID
650
UNITS
V
V
mA
MAXIMUM RATINGS - D1: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
40
Continuous Forward Current
IF
500
Peak Repetitive Forward Current, tp≤1.0ms
IFRM
3.5
Peak Forward Surge Current, tp = 8.0ms
IFSM
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=4.5V, VDS=0
IDSS
VDS=16V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.5
VSD
VGS=0, IS=200mA
rDS(ON)
VGS=4.5V, ID=600mA
0.14
rDS(ON)
VGS=2.5V, ID=500mA
0.2
rDS(ON)
VGS=1.8V, ID=350mA
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
1.0
100
1.1
1.1
0.23
0.275
0.7
UNITS
μA
nA
V
V
V
Ω
Ω
Ω
R3 (1-July 2015)