CMLM0205_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE

CMLM0205
Multi Discrete Module^™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
SOT-563 CASE
MAXIMUM RATINGS - CASE: (TA=25°C)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLM0205 is a
Multi Discrete Module™ consisting of a single
N-Channel MOSFET and a Low VF Schottky diode
packaged in a space saving PICOmini™ SOT-563
case. This device is designed for small signal general
purpose applications where size and operational
efficiency are prime requirements.
• Combination: N-Channel MOSFET and
Low VF Schottky Diode.
MARKING CODE: C25
SYMBOL
PD
TJ, Tstg
Θ_JA
350
-65 to +150
357
UNITS
mW
°C
°C/W
MAXIMUM RATINGS - Q1: (TA=25°C)
SYMBOL
Drain-Source Voltage
VDS
60
Drain-Gate Voltage
VDG
60
Gate-Source Voltage
VGS
40
Continuous Drain Current
ID
280
Continuous Source Current (Body Diode)
IS
280
Maximum Pulsed Drain Current
IDM
1.5
Maximum Pulsed Source Current
ISM
1.5
MAXIMUM RATINGS - D1: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
40
Continuous Forward Current
IF
500
Peak Repetitive Forward Current, tp≤1.0ms
IFRM
3.5
Peak Forward Surge Current, tp = 8.0ms
IFSM
10
ELECTRICAL CHARACTERISTICS - Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IGSSF, IGSSR VGS=20V, VDS=0
100
IDSS
VDS=60V, VGS=0
1.0
IDSS
VDS=60V, VGS=0, TJ=125°C
500
ID(ON)
VGS=10V, VDS=10V
500
BVDSS
VGS=0, ID=10μA
60
VGS(th)
VDS=VGS, ID=250μA
1.0
2.5
VDS(ON)
VGS=10V, ID=500mA
1.0
VDS(ON)
VGS=5.0V, ID=50mA
0.15
VSD
VGS=0, IS=400mA
1.2
rDS(ON)
VGS=10V, ID=500mA
2.0
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
3.5
UNITS
V
V
V
mA
mA
A
A
UNITS
V
mA
A
A
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
R1 (18-January 2010)