CMLM0205 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – MULTI DISCRETE MODULE™ SURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE

CMLM0205
M U LT I D I S C R E T E M O D U L E ^™
SURFACE MOUNT
N-CHANNEL MOSFET AND
LOW VF SILICON SCHOTTKY DIODE
TM
SOT-563 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLM0205 is a
Multi Discrete Module™ consisting of a single
N-Channel MOSFET and a Low VF Schottky diode
packaged in a space saving PICOmini™ SOT-563
case. This device is designed for small signal
general purpose applications where size and
operational efficiency are prime requirements.
• Combination: N-Channel MOSFET and
Low VF Schottky Diode.
MARKING CODE: C25
MAXIMUM RATINGS (SOT-563 Package):
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
(TA=25°C)
SYMBOL
PD
TJ, Tstg
Θ_JA
350
-65 to +150
357
UNITS
mW
°C
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
SYMBOL
VRRM
IF
IFRM
IFSM
ELECTRICAL CHARACTERISTICS Q1: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IGSSF
VGS=20V, VDS=0V
IGSSR
VGS=20V, VDS=0V
IDSS
VDS=60V, VGS=0V
IDSS
VDS=60V, VGS=0V, Tj=125°C
ID(ON)
VGS=10V, VDS ≥ 2VDS(ON)
500
BVDSS
VGS=0V, ID=10µA
60
VGS(th)
VDS=VGS, ID=250µA
1.0
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, Tj=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, Tj=125°C
gFS
VDS ≥ 2VDS(ON), ID=200mA
80
UNITS
60
V
60
V
40
V
280
mA
280
mA
1.5
A
1.5
A
UNITS
40
V
500
mA
3.5
A
10
A
MAX
100
100
1.0
500
2.5
1.0
0.15
2.0
3.5
3.0
5.0
UNITS
nA
nA
µA
µA
mA
V
V
V
V
Ω
Ω
Ω
Ω
mmhos
R0 (12-October 2004)