CMLDM8120TG_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET

CMLDM8120TG
SURFACE MOUNT SILICON
P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM8120TG
is an enhancement-mode P-Channel MOSFET,
manufactured by the P-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(ON) and a
MAX threshold voltage of 0.85V.
MARKING CODE: CT8
SOT-563 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Device is Halogen Free by design
• Low rDS(ON)
• MAX Threshold Voltage (0.85V)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
860
950
360
4.0
4.0
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
VGS=8.0V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=250μA
VDS=VGS, ID=250μA
VGS=0 IS=360mA
VGS=4.5V, ID=0.95A
1.0
5.0
20
24
0.45
0.085
rDS(ON)
VGS=4.5V, ID=0.77A
0.085
rDS(ON)
VGS=2.5V, ID=0.67A
0.13
rDS(ON)
VGS=1.8V, ID=0.20A
0.19
rDS(ON)
VGS=1.2V, ID=0.10A
0.60
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
50
500
0.85
0.9
0.15
0.142
0.20
0.24
UNITS
V
V
mA
mA
mA
A
A
mW
mW
mW
°C
°C/W
UNITS
nA
nA
V
V
V
Ω
Ω
Ω
Ω
Ω
R4 (8-June 2015)