CMLDM8120TG Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMLDM8120TG
SURFACE MOUNT
P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM8120TG
is an Enhancement-mode P-Channel Field Effect
Transistor, manufactured by the P-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(ON)
and a MAX Threshold Voltage of 0.85V.
MARKING CODE: CT8
SOT-563 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• Device is Halogen Free by design
• Low rDS(ON)
• MAX Threshold Voltage (0.85V)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current, t≤5.0s
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current, tp=10μs
Maximum Pulsed Source Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
ID
IS
IDM
ISM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
860
950
360
4.0
4.0
350
300
150
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
1.0
IDSS
VDS=20V, VGS=0
5.0
BVDSS
VGS=0, ID=250μA
20
24
VGS(th)
VDS=VGS, ID=250μA
0.45
VSD
VGS=0 IS=360mA
rDS(ON)
VGS=4.5V, ID=0.95A
0.085
rDS(ON)
rDS(ON)
VGS=4.5V, ID=0.77A
VGS=2.5V, ID=0.67A
0.085
0.13
rDS(ON)
VGS=1.8V, ID=0.20A
0.19
rDS(ON)
VGS=1.2V, ID=0.10A
0.60
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
50
500
0.85
0.9
0.15
0.142
0.20
0.24
UNITS
V
V
mA
mA
mA
A
A
mW
mW
mW
°C
°C/W
UNITS
nA
nA
V
V
V
Ω
Ω
Ω
Ω
Ω
R2 (2-August 2011)