CMLDM8002A Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMLDM8002A
CMLDM8002AJ
SURFACE MOUNT PICOmini^TM
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
SOT-563 CASE
MARKING CODE: CMLDM8002A: C08
CMLDM8002AJ: CJ8
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM8002A and
CMLDM8002AJ are dual chip Enhancement-mode
P-Channel Field Effect Transistors, manufactured by the
P-Channel DMOS Process, designed for high speed pulsed
amplifier and driver applications. The CMLDM8002A utilizes
the USA pinout configuration, while the CMLDM8002AJ,
utilizing the Japanese pinout configuration, is available as a
special order. These special Dual Transistor devices offer Low
RDS(on) and Low VDS(on).
FEATURES:
• Dual Chip Device
• Low RDS(on)
• Low VDS(on)
• Low Threshold Voltage
• Fast Switching
• Logic Level Compatible
• Small SOT-563 package
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter
Circuits
• Battery Powered Portable
Equipment
MAXIMUM RATINGS (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Power Dissipation
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
PD
PD
TJ,Tstg
Θ_JA
50
50
20
280
280
1.5
1.5
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mA
A
A
mW (Note 1)
mW (Note 2)
mW (Note 3)
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR
SYMBOL
TEST CONDITIONS
IGSSF
IGSSR
IDSS
IDSS
ID(ON)
BVDSS
VGS=20V, VDS=0V
VGS=20V, VDS=0V
VDS=50V, VGS=0V
VDS=50V, VGS=0V, Tj=125°C
VGS=10V, VDS=10V
VGS=0V, ID=10µA
(TA=25°C unless otherwise noted)
MIN
MAX
100
100
1.0
500
500
50
UNITS
nA
nA
µA
µA
mA
V
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm²
R0 (24-January 2006)