CMLDM7484_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – ENHANCEMENT-MODE COMPLEMENTARY MOSFET

CMLDM7484
SURFACE MOUNT SILICON
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7484
consists of complementary N-Channel and P-Channel
enhancement-mode silicon MOSFETs designed for
high speed pulsed amplifier and driver applications.
These MOSFETs offer very low rDS(ON) and low
threshold voltage.
MARKING CODE: 8C7
SOT-563 CASE
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-563 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
PD
PD
PD
TJ, Tstg
Θ_JA
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
N-CH (Q1)
MIN MAX
IGSSF, IGSSR VGS=8.0V, VDS=0
-
3.0
IDSS
VDS=30V, VGS=0
-
1.0
BVDSS
VGS=0, ID=10μA
30
-
BVDSS
VGS=0, ID=100μA
-
-
VGS(th)
VDS=VGS, ID=250μA
0.5
1.0
VSD
VGS=0, IS=400mA
0.5
1.1
VSD
VGS=0, IS=100mA
-
-
rDS(ON)
VGS=4.5V, ID=200mA
-
0.46
rDS(ON)
VGS=4.5V, ID=430mA
-
-
rDS(ON)
VGS=2.5V, ID=100mA
-
0.56
rDS(ON)
VGS=2.5V, ID=200mA
-
-
rDS(ON)
VGS=1.8V, ID=75mA
-
0.73
rDS(ON)
VGS=1.8V, ID=100mA
-
-
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
30
8.0
450
350
300
150
-65 to +150
357
P-CH (Q2)
MIN MAX
-
3.0
-
1.0
-
-
30
-
0.5
1.0
-
-
0.5
1.1
-
-
-
1.1
-
-
-
2.0
-
-
-
3.3
UNITS
V
V
mA
mW
mW
mW
°C
°C/W
UNITS
μA
μA
V
V
V
V
V
Ω
Ω
Ω
Ω
Ω
Ω
R5 (8-June 2015)