CMLDM7120TG_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET

CMLDM7120TG
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7120TG
is an enhancement-mode N-Channel MOSFET,
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. This MOSFET offers low rDS(ON) and a
MAX threshold voltage of 0.85V.
MARKING CODE: CT7
SOT-563 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• Device is Halogen Free by design
• ESD protection up to 2kV
• Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)
• MAX Threshold Voltage (0.85V)
• Logic level compatibility
SYMBOL
VDS
VGS
ID
IDM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
1.0
4.0
350
300
150
-65 to +150
357
UNITS
V
V
A
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR VGS=8.0V, VDS=0
IDSS
VDS=20V, VGS=0
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=10V, ID=1.0mA
0.5
VSD
VGS=0, IS=1.0A
rDS(ON)
rDS(ON)
VGS=4.5V, ID=0.5A
VGS=2.5V, ID=0.5A
0.075
0.10
rDS(ON)
VGS=1.5V, ID=0.1A
0.20
rDS(ON)
VGS=1.2V, ID=0.1A
0.80
gFS
VDS=10V, ID=0.5A
2.5
Crss
VDS=10V, VGS=0, f=1.0MHz
45
Ciss
VDS=10V, VGS=0, f=1.0MHz
220
Coss
VDS=10V, VGS=0, f=1.0MHz
120
Qg(tot)
VDS=10V, VGS=4.5V, ID=1.0A
2.4
Qgs
VDS=10V, VGS=4.5V, ID=1.0A
0.25
Qgd
VDS=10V, VGS=4.5V, ID=1.0A
0.65
ton
VDD=10V, VGS=5.0V, ID=0.5A
25
toff
VDD=10V, VGS=5.0V, ID=0.5A
140
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
10
10
0.85
1.10
0.10
0.14
0.25
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
R4 (8-June 2015)