CMLDM7120G Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

CMLDM7120G
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7120G
is an Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers Low rDS(ON)
and Low Threshold Voltage.
MARKING CODE: C7G
SOT-563 CASE
• Device is Halogen Free by design
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON) (0.25Ω MAX @ VGS=1.5V)
• High current (ID=1.0A)
• Logic level compatibility
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current, tp=10μs
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IDM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
1.0
4.0
350
300
150
-65 to +150
357
UNITS
V
V
A
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton
toff
VGS=8.0V, VDS=0
VDS=20V, VGS=0
VGS=0, ID=250μA
20
VDS=10V, ID=1.0mA
0.5
VGS=0, IS=1.0A
VGS=4.5V, ID=0.5A
VGS=2.5V, ID=0.5A
VGS=1.5V, ID=0.1A
VDS=10V, ID=0.5A
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDS=10V, VGS=0, f=1.0MHz
VDD=10V, VGS=5.0V, ID=0.5A
VDD=10V, VGS=5.0V, ID=0.5A
0.075
0.10
0.20
2.5
45
220
120
25
140
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
MAX
10
10
1.2
1.1
0.10
0.14
0.25
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
R3 (18-January 2010)