CMLDM7005_1306 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET

CMLDM7005
SURFACE MOUNT SILICON
DUAL N-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM7005
consists of dual N-Channel enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer very low
rDS(ON) and low threshold voltage.
MARKING CODE: CC7
SOT-563 CASE
APPLICATIONS:
• Load switch/Level shifting
• Battery charging
• Boost switch
• Electro-luminescent backlighting
FEATURES:
• ESD protection up to 2kV (Human Body Model)
• 350mW power dissipation
• Very low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small, SOT-563 surface mount package
• Complementary dual P-Channel device: CMLDM8005
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State - Note 1)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 2)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL
VDS
VGS
ID
IS
IDM
PD
PD
PD
TJ, Tstg
Θ_JA
20
8.0
650
280
1.3
350
300
150
-65 to +150
357
UNITS
V
V
mA
mA
A
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=4.5V, VDS=0
1.0
μA
IDSS
VDS=16V, VGS=0
100
nA
BVDSS
VGS=0, ID=250μA
20
V
VGS(th)
VDS=VGS, ID=250μA
0.5
1.1
V
VSD
VGS=0, IS=200mA
1.1
V
rDS(ON)
VGS=4.5V, ID=600mA
0.14
0.23
Ω
rDS(ON)
VGS=2.5V, ID=500mA
0.2
0.275
Ω
rDS(ON)
VGS=1.8V, ID=350mA
0.7
Ω
gFS
VDS=10V, ID=400mA
1.0
S
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
R3 (10-June 2013)