CMLDM3757_15 Datasheet, PDF (1/5 Pages) Central Semiconductor Corp – ENHANCEMENT-MODE COMPLEMENTARY MOSFET

CMLDM3757
SURFACE MOUNT SILICON
N-CHANNEL AND P-CHANNEL
ENHANCEMENT-MODE
COMPLEMENTARY MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLDM3757
consists of complementary silicon N-Channel and
P-Channel enhancement-mode MOSFETs designed
for high speed pulsed amplifier and driver applications.
These MOSFETs offer very low rDS(ON) and low
threshold voltage.
MARKING CODE: 3C7
SOT-563 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable devices
FEATURES:
• ESD protection up to 1800V (Human Body Model)
• 350mW power dissipation
• Very low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small, SOT-563 surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Maximum Pulsed Drain Current (tp=10μs)
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
SYMBOL N-CH (Q1)
P-CH (Q2)
VDS
20
VGS
8.0
ID
540
430
IDM
1500
750
PD
350
PD
300
PD
150
TJ, Tstg
-65 to +150
Θ_JA
357
UNITS
V
V
mA
mA
mW
mW
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C)
N-CH (Q1)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
IGSSF, IGSSR VGS=4.5V, VDS=0
- - 5.0
IDSS
VDS=16V, VGS=0
- - 1.0
BVDSS
VGS=0, ID=250μA
20 - -
VGS(th)
VDS=VGS, ID=250μA
0.45 - 1.0
VSD
VGS=0, IS=350mA
- - 1.2
rDS(ON)
VGS=4.5V, ID=540mA
- 0.35 0.55
rDS(ON)
VGS=4.5V, ID=430mA
---
rDS(ON)
VGS=2.5V, ID=500mA
- 0.5 0.7
rDS(ON)
VGS=2.5V, ID=300mA
---
rDS(ON)
VGS=1.8V, ID=350mA
- 0.7 0.9
rDS(ON)
VGS=1.8V, ID=150mA
---
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm²
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm²
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm²
P-CH (Q2)
MIN TYP MAX
- - 2.0
- - 1.0
20 - -
0.45 - 1.0
- - 1.2
---
- 0.4 0.9
---
- 0.55 1.2
---
- 0.75 2.0
UNITS
μA
μA
V
V
V
Ω
Ω
Ω
Ω
Ω
Ω
R6 (8-June 2015)