CMLD6001DO_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – ULTRA LOW LEAKAGE SWITCHING DIODE

CMLD6001DO
SURFACE MOUNT SILICON
DUAL, ISOLATED, OPPOSING
ULTRA LOW LEAKAGE
SWITCHING DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6001DO
type contains two (2) isolated opposing configuration,
silicon switching diodes, manufactured by the epitaxial
planar process, epoxy molded in an SOT-563 surface
mount package. These devices are designed for
switching applications requiring extremely low leakage.
MARKING CODE: C60
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
75
100
250
4.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=75V
500
BVR
IR=100μA
100
VF
IF=1.0mA
0.85
VF
IF=10mA
0.95
VF
IF=100mA
1.1
CJ
VR=0, f=1.0MHz
2.0
trr
IR=IF=10mA, Irr=1.0mA, RL=100Ω
3.0
UNITS
V
V
mA
A
A
mW
°C
°C/W
UNITS
pA
V
V
V
V
pF
μs
R5 (15-June 2015)