CMLD6001DO Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini™ DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES

CMLD6001DO
SURFACE MOUNT
PICOmini^™
DUAL, ISOLATED, OPPOSING
LOW LEAKAGE SILICON
SWITCHING DIODES
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD6001DO
type contains Two (2) Isolated Opposing Configuration,
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a PICOmini^™ surface
mount package. These devices are designed for
switching applications requiring extremely low leakage.
MARKING CODE: C60
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IF
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
75
100
250
4000
1000
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
UNITS
V
V
mA
mA
mA
mW
°C
°C/W
SYMBOL
TEST CONDITIONS
MIN
IR
BVR
VF
VF
VF
CT
trr
VR=75V
IR=100µA
100
IF=1.0mA
IF=10mA
IF=100mA
VR=0, f=1 MHz
IR=IF=10mA, RL=100Ω Rec. to 1.0mA
MAX
500
0.85
0.95
1.1
2.0
3.0
UNITS
pA
V
V
V
V
pF
µs
R0 (3-November 2003)