CMLD3003DO_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES

CMLD3003DO
CMLD3003DOG
SURFACE MOUNT
DUAL, ISOLATED, OPPOSING
LOW LEAKAGE SILICON
SWITCHING DIODES
SOT-563 CASE
• The CMLD3003DOG is Halogen Free by design
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD3003DO
and CMLD3003DOG types contain Two (2) Isolated
Opposing Configuration, Silicon Switching Diodes,
manufactured by the epitaxial planar process, epoxy
molded in a PICOmini™ surface mount package.
These devices are designed for switching applications
requiring extremely low leakage.
MARKING CODES:
CMLD3003DO: C30
CMLD3003DOG: 3CG
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0µs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
180
200
600
700
2.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
VR=125V
1.0
IR
VR=125V, TA=150°C
3.0
IR
VR=180V
10
IR
VR=180V, TA=150°C
5.0
BVR
IR=5.0µA
200
VF
IF=1.0mA
0.62
0.72
VF
IF=10mA
0.72
0.83
VF
IF=50mA
0.80
0.89
VF
IF=100mA
0.83
0.93
VF
IF=200mA
0.87
1.10
VF
IF=300mA
0.90
1.15
CT
VR=0, f=1.0MHz
4.0
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
µA
nA
µA
V
V
V
V
V
V
V
pF
R2 (18-January 2010)