CMLD3003DO Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT PICOmini DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES

CMLD3003DO
SURFACE MOUNT
PICOmini^™
DUAL, ISOLATED, OPPOSING
LOW LEAKAGE SILICON
SWITCHING DIODES
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD3003DO
type contains Two (2) Isolated Opposing Configuration,
Silicon Switching Diodes, manufactured by the epitaxial
planar process, epoxy molded in a PICOmini^™ surface
mount package. These devices are designed for
switching applications requiring extremely low leakage.
MARKING CODE: C30
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VR
IO
IF
IFRM
IFSM
IFSM
PD
TJ,Tstg
Θ_JA
180
200
600
700
2.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
IR
IR
IR
IR
BVR
VF
VF
VF
VF
VF
VF
CT
VR=125V
VR=125V, TA=150°C
VR=180V
VR=180V, TA=150°C
IR=5.0µA
IF=1.0mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0, f=1 MHz
1.0
3.0
10
5.0
200
0.62
0.72
0.72
0.83
0.80
0.89
0.83
0.93
0.87
1.10
0.90
1.15
4.0
UNITS
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
µA
nA
µA
V
V
V
V
V
V
V
pF
R0 (07-June 2004)