CMLD2004G Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL, ISOLATED HIGH VOLTAGE SWITCHING DIODE

CMLD2004G
SURFACE MOUNT SILICON
DUAL, ISOLATED
HIGH VOLTAGE
SWITCHING DIODE
SOT-563 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD2004G
contains two (2) isolated high voltage silicon switching
diodes, manufactured by the epitaxial planar process,
epoxy molded in an SOT-563 surface mount package.
These devices are designed for applications requiring
high voltage capability.
MARKING CODE: DG
MAXIMUM RATINGS: (TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Peak Repetitive Reverse Current
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VR
VRRM
IO
IF
IFRM
IFSM
IFSM
PD
TJ, Tstg
Θ_JA
240
300
200
225
625
4.0
1.0
250
-65 to +150
500
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
MAX
IR
VR=240V
100
IR
VR=240V, TA=150°C
100
BVR
IR=100μA
300
VF
IF=100mA
1.0
CJ
VR=0, f=1.0MHz
5.0
trr
IF=IR=30mA, Irr=3.0mA, RL=100Ω
50
UNITS
V
V
mA
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
V
V
pF
ns
R1 (17-January 2014)