CMKT5089M10_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL NPN SILICON MATCHED hFE TRANSISTORS

CMKT5089M10
SURFACE MOUNT
DUAL NPN SILICON
MATCHED hFE TRANSISTORS
SOT-363 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT5089M10
consists of two (2) individually isolated 5089
NPN silicon transistors with matched hFE. This
ULTRAmini™ device is manufactured by the epitaxial
planar process and epoxy molded in an SOT-363
surface mount package. The CMKT5089M10 has
been designed for applications requiring high gain
and low noise.
MARKING CODE: C9M0
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
30
25
4.5
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=15V
50
IEBO
VEB=4.5V
100
BVCBO
IC=100μA
30
BVCEO
IC=1.0mA
25
BVEBO
IE=100μA
4.5
VCE(SAT)
IC=10mA, IB=1.0mA
0.5
VBE(SAT)
IC=10mA, IB=1.0mA
0.8
hFE
VCE=5.0V, IC=0.1mA
400
1200
hFE
VCE=5.0V, IC=1.0mA
450
hFE
VCE=5.0V, IC=10mA
400
fT
VCE=5.0V, IC=500μA, f=20MHz
50
Cob
VCB=5.0V, IE=0, f=1.0MHz
4.0
Cib
VBE=0.5V, IC=0, f=1.0MHz
10
hfe
VCE=5.0V, IC=1.0mA, f=1.0kHz
450
1800
NF
VCE=5.0V, IC=100μA, RS=1.0kΩ,
f=10Hz to 15.7kHz
2.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
dB
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
hFE1/hFE2 * VCE=5.0V, IC=1.0mA
0.9
1.0
|VBE1-VBE2| VCE=5.0V, IC=100μA
5.0
mV
* The lowest hFE reading is taken as hFE1.
R4 (13-January 2010)