CMKT5089M10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT ULTRAmini DUAL NPN SILICON MATCHED hFE TRANSISTORS

CMKT5089M10
SURFACE MOUNT
ULTRAmini^TM
DUAL NPN SILICON
MATCHED hFE TRANSISTORS
SOT-363 CASE
Central^TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR
CMKT5089M10 consists of two (2) individual,
isolated 5089 NPN silicon transistors with
matched hFE. This ULTRAmini^TM device is
manufactured by the epitaxial planar process and
epoxy molded in an SOT-363 surface mount
package. The CMKT5089M10 has been designed
for applications requiring high gain and low noise.
MARKING CODE: C9M0
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ,Tstg
Θ_JA
30
25
4.5
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
TEST CONDITIONS
VCB=15V
VEB=4.5V
IC=100µA
IC=1.0mA
IE=100µA
IC=10mA, IB=1.0mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=500µA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100µA, RS=10kΩ
f=10Hz to 15.7kHz
MIN
MAX
50
100
30
25
4.5
0.5
0.8
400
1200
450
400
50
4.0
10
450
1800
2.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
MHz
pF
pF
dB
MATCHING CHARACTERISTICS:
SYMBOL
hFE1/hFE2*
|VBEON1-VBEON2|
TEST CONDITIONS
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=100µA
* The lowest hFE reading is taken as hFE1.
MIN
MAX
UNITS
0.9
1.0
5.0
mV
R2 (7-August 2003)