CMKT3904_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL SMALL SIGNAL SWITCHING TRANSISTORS

CMKT3904 NPN/NPN
CMKT3906 PNP/PNP
SURFACE MOUNT SILICON
DUAL SMALL SIGNAL
SWITCHING TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT3904 (two
single NPN) and CMKT3906 (two single PNP) are silicon
transistors in a space saving SOT-363 package, designed
for small signal general purpose amplifier and switching
applications.
SOT-363 CASE
FEATURES:
• Two NPN (3904) or Two PNP (3906)
Transistors in a single package
MARKING CODES: CMKT3904: K04
CMKT3906: K06
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN
PNP
60
40
40
40
6.0
5.0
200
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX UNITS
ICEV
VCE=30V, VEB=3.0V
-
50
-
50
nA
IBL
VCE=30V, VEB=3.0V
-
50
-
-
nA
BVCBO
IC=10μA
60
-
40
-
V
BVCEO
IC=1.0mA
40
-
40
-
V
BVEBO
IE=10μA
6.0
-
5.0
-
V
VCE(SAT)
IC=10mA, IB=1.0mA
- 0.20
- 0.25
V
VCE(SAT)
IC=50mA, IB=5.0mA
- 0.30
- 0.40
V
VBE(SAT)
IC=10mA, IB=1.0mA
0.65 0.85
0.65 0.85
V
VBE(SAT)
IC=50mA, IB=5.0mA
- 0.95
- 0.95
V
hFE
VCE=1.0V, IC=0.1mA
40
-
60
-
hFE
VCE=1.0V, IC=1.0mA
70
-
80
-
hFE
VCE=1.0V, IC=10mA
100 300
100 300
hFE
VCE=1.0V, IC=50mA
60
-
60
-
hFE
VCE=1.0V, IC=100mA
30
-
30
-
fT
VCE=20V, IC=10mA, f=100MHz
300
-
250
-
MHz
Cob
VCB=5.0V, IE=0, f=1.0MHz
-
4.0
-
4.5
pF
Cib
VBE=0.5V, IC=0, f=1.0MHz
-
8.0
-
10
pF
R6 (23-September 2013)