CMKT2222A_10 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS

CMKT2222A
SURFACE MOUNT
DUAL NPN SMALL SIGNAL
SILICON SWITCHING
TRANSISTORS
SOT-363 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2222A
consists of two individually isolated 2222A NPN silicon
transistors, manufactured by the epitaxial planar
process and epoxy molded in an SOT-363 surface
mount package. This ULTRAmini™ device has
been designed for small signal general purpose and
switching applications.
MARKING CODE: K22
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
75
40
6.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
ICBO
VCB=60V
10
ICBO
VCB=60V, TA=125°C
10
ICEV
VCE=60V, VEB=3.0V
10
IEBO
VEB=3.0V
10
BVCBO
IC=10μA
75
BVCEO
IC=10mA
40
BVEBO
IE=10μA
6.0
VCE(SAT)
IC=150mA, IB=15mA
0.3
VCE(SAT)
IC=500mA, IB=50mA
1.0
VBE(SAT)
IC=150mA, IB=15mA
0.6
1.2
VBE(SAT)
IC=500mA, IB=50mA
2.0
hFE
VCE=10V, IC=0.1mA
35
hFE
VCE=10V, IC=1.0mA
50
hFE
VCE=10V, IC=10mA
75
hFE
VCE=1.0V, IC=150mA
50
hFE
VCE=10V, IC=150mA
100
300
hFE
VCE=10V, IC=500mA
40
fT
VCE=20V, IC=20mA, f=100MHz
300
Cob
VCB=10V, IE=0, f=1.0MHz
8.0
Cib
VEB=0.5V, IC=0, f=1.0MHz
25
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
R4 (13-January 2010)