CMKT2207_15 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMKT2207
SURFACE MOUNT
COMPLEMENTARY SILICON
TRANSISTORS
SOT-363 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2207
consists of one 2222A NPN transistor and an
individually isolated complementary 2907A PNP
transistor, manufactured by the epitaxial planar
process and epoxy molded in an SOT-363 surface
mount package. This ULTRAmini™ device has
been designed for small signal general purpose and
switching applications.
MARKING CODE: K70
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ_JA
NPN (Q1) PNP (Q2)
75
60
40
60
6.0
5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
ICBO
ICBO
ICBO
ICBO
IEBO
ICEV
ICEV
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
hFE
hFE
fT
fT
Cob
Cib
VCB=60V
VCB=50V
VCB=60V, TA=125°C
VCB=50V, TA=125°C
VEB=3.0V
VCE=60V, VEB(OFF)=3.0V
VCE=30V, VEB(OFF)=500mV
IC=10μA
IC=10mA
IE=10μA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
VCE=10V, IC=150mA
VCE=1.0V, IC=150mA
VCE=10V, IC=500mA
VCE=20V, IC=20mA, f=100MHz
VCE=20V, IC=50mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
-
10
-
-
-
10
-
-
-
10
-
10
-
-
75
-
40
-
6.0
-
-
0.3
-
1.0
0.6 1.2
-
2.0
35
-
50
-
75
-
100 300
50
-
40
-
300
-
-
-
-
8.0
-
25
-
-
-
10
-
-
-
10
-
-
-
-
-
50
60
-
60
-
5.0
-
-
0.4
-
1.6
-
1.3
-
2.6
75
-
100
-
100
-
100 300
-
-
50
-
-
-
200
-
-
8.0
-
-
UNITS
nA
nA
nA
nA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
pF
R4 (13-January 2010)