CMKDM8005_15 Datasheet, PDF (1/3 Pages) Central Semiconductor Corp – SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET

CMKDM8005
SURFACE MOUNT SILICON
DUAL P-CHANNEL
ENHANCEMENT-MODE
MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKDM8005
consists of dual P-Channel enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer very low
rDS(ON) and low threshold voltage.
MARKING CODE: C85M
SOT-363 CASE
APPLICATIONS:
• Load switch/Level shifting
• Battery charging
• Boost switch
• Electro-luminescent backlighting
FEATURES:
• ESD protection up to 1800V (Human Body Model)
• 350mW power dissipation
• Very low rDS(ON)
• Low threshold voltage
• Logic level compatible
• Small, SOT-363 surface mount package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IS
IDM
PD
TJ, Tstg
Θ_JA
20
8.0
650
250
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IGSSF, IGSSR VGS=4.5V, VDS=0
10
IDSS
VDS=16V, VGS=0
100
BVDSS
VGS=0, ID=250μA
20
VGS(th)
VDS=VGS, ID=250μA
0.5
1.0
VSD
VGS=0, IS=250mA
1.1
rDS(ON)
VGS=4.5V, ID=350mA
0.25
0.36
rDS(ON)
VGS=2.5V, ID=300mA
0.37
0.5
rDS(ON)
VGS=1.8V, ID=150mA
0.8
gFS
VDS=10V, ID=200mA
0.2
Crss
VDS=16V, VGS=0, f=1.0MHz
25
Ciss
VDS=16V, VGS=0, f=1.0MHz
100
Coss
VDS=16V, VGS=0, f=1.0MHz
21
UNITS
μA
nA
V
V
V
Ω
Ω
Ω
S
pF
pF
pF
R3 (3-June 2013)