CMKDM8005 Datasheet, PDF (1/2 Pages) Central Semiconductor Corp – SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS

CMKDM8005
SURFACE MOUNT
DUAL P-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKDM8005
consists of Dual P-Channel Enhancement-mode silicon
MOSFETs designed for high speed pulsed amplifier
and driver applications. These MOSFETs offer Very
Low rDS(ON) and Low Threshold Voltage.
MARKING CODE: C85M
SOT-363 CASE
APPLICATIONS:
• Load Switch / Level Shifting
• Battery Charging
• Boost Switch
• Electro-luminescent Backlighting
FEATURES:
• ESD Protection up to 2kV
• 350mW Power Dissipation
• Very Low rDS(ON)
• Low Threshold Voltage
• Logic Level Compatible
• Small, SOT-363 Surface Mount Package
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VGS
ID
IS
IDM
PD
TJ, Tstg
Θ_JA
20
8.0
650
250
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
IGSSF, IGSSR VGS=4.5V, VDS=0
10
μA
IDSS
VDS=16V, VGS=0
100
nA
BVDSS
VGS=0, ID=250μA
20
V
VGS(th)
VDS=VGS, ID=250μA
0.5
1.0
V
VSD
VGS=0, IS=250mA
1.1
V
rDS(ON)
VGS=4.5V, ID=350mA
0.25
0.36
Ω
rDS(ON)
VGS=2.5V, ID=300mA
0.37
0.5
Ω
rDS(ON)
VGS=1.8V, ID=150mA
0.8
Ω
Qg(tot)
VDS=10V, VGS=4.5V, ID=200mA
1.2
nC
Qgs
VDS=10V, VGS=4.5V, ID=200mA
0.24
nC
Qgd
VDS=10V, VGS=4.5V, ID=200mA
0.36
nC
gFS
VDS=10V, ID=200mA
0.2
S
R2 (27-September 2011)